AOT288L/aob288l/aotf288l 80v n-channel mosfet general description product summary v ds i d (at v gs =10v) 46a / 43a r ds(on) (at v gs =10v) < 9.2m w (< 8.9m w *) r ds(on) (at v gs =6v) <12.5m w (< 12.2m w *) 100% uis tested 100% r g tested symbol v ds v gs 80v AOT288L/aob288l aotf288l drain-source voltage 80 the AOT288L & aob288l & aotf288l uses trench mosfet technology that is uniquely optimized to pro vide the most efficient high frequency switching perform ance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss.this device is ideal for boost conver ters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage g ds to-263 d 2 pak g d s g d s d s g top view to-220f to-220 aotf288l AOT288L aob288l i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc 43 36 30 160 maximum junction-to-case pulsed drain current c continuous drain current g power dissipation a 15 t c =100c power dissipation b p d 46.5 17.5 -55 to 175 junction and storage temperature range c/w c/w maximum junction-to-ambient a d 1.6 60 4.2 w t a =70c 1.3 t a =25c 2.1 p dsm a t a =25c i dsm 93.5 35.5 10.5 46 35 avalanche energy l=0.1mh c a t a =70c continuous drain current 61 i d w t c =25c c thermal characteristics parameter AOT288L/aob288l aotf288l * surface mount package to263 maximum junction-to-ambient a c/w r q ja 15 60 t c =25c t c =100c mj avalanche current c 8 a units rev 0 : dec. 2012 www.aosmd.com page 1 of 7
AOT288L/aob288l/aotf288l symbol min typ max units bv dss 80 v v ds =80v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.3 2.8 3.4 v i d(on) 160 a 7.6 9.2 t j =125c 12.6 15.2 9.5 12.5 m w 7.3 8.9 m w 9.2 12.2 m w g fs 50 s v sd 0.71 1 v i s 46 a c iss 1871 pf c oss 265 pf c rss 14 pf r g 0.6 1.3 2 w q g (10v) 26.5 38 nc v gs =10v, i d =20a to263 v gs =6v, i d =20a to263 i dss m a zero gate voltage drain current m w to220/to220f on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current v ds =v gs i d =250 m a v ds =0v, v gs =20v r ds(on) static drain-source on-resistance v gs =6v, i d =20a to220/to220f electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a diode forward voltage maximum body-diode continuous current g input capacitance output capacitance reverse transfer capacitance v gs =0v, v ds =40v, f=1mhz dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge switching parameters q g (10v) 26.5 38 nc q gs 8.5 nc q gd 4 nc t d(on) 11.5 ns t r 8.5 ns t d(off) 21.5 ns t f 5.5 ns t rr 32 ns q rr 162 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =10v, v ds =40v, r l =2 w , r gen =3 w turn-off fall time v gs =10v, v ds =40v, i d =20a turn-on delaytime total gate charge gate source charge gate drain charge i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : dec. 2012 www.aosmd.com page 2 of 7
AOT288L/aob288l/aotf288l typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.4 0.8 1.2 1.6 2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a v gs =6v i d =20a 25 c 125 c v ds =5v v gs =6v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 4.5v 10v 6v vgs=4v 5v 8v v gs =10v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0 : dec. 2012 www.aosmd.com page 3 of 7
AOT288L/aob288l/aotf288l typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 70 80 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =40v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for AOT288L and aob288l (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 40 for AOT288L and aob288l (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOT288L and aob288l (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse area for AOT288L and aob288l (note f) r q jc =1.6 c/w rev 0 : dec. 2012 www.aosmd.com page 4 of 7
AOT288L/aob288l/aotf288l typical electrical and thermal characteristics 17 52 10 0 18 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for aotf288l 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 13: single pulse power rating junction-to-ca se for aotf288l (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c r q jc =4.2 c/w pulse width (s) figure 14: normalized maximum transient thermal imp edance for aotf288l (note f) rev 0 : dec. 2012 www.aosmd.com page 5 of 7
AOT288L/aob288l/aotf288l typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 16: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 17: current de - rating (note f) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 18: single pulse power rating junction - to - t a =25 c 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 15: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 19: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 17: current de - rating (note f) figure 18: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w rev 0 : dec. 2012 www.aosmd.com page 6 of 7
AOT288L/aob288l/aotf288l - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0 : dec. 2012 www.aosmd.com page 7 of 7
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